Spreading Resistance Profiling (SRP)

The Spreading Resistance Profiling method is suitable for measuring electrical resistance profiles in silicon. These measurements can be used to calculate doping profiles of the electrically-active charge carriers. In comparison, physical/chemical doping can be measured using SIMS.

For SRP, the silicon sample is polished with a specific angle toward the surface and a defined profile is generated over the depth via the grinding angle. This polished section is then electrically characterized using a step prober which generates the depth profile.

We perform SRP grindings and measurements of different depths on any type of silicon sample. We are currently working on a project to characterize SiC, but the measurement of compound semiconductors is currently not possible.


Our Services

  • Bevel preparation on flat substrates and suitable structures
  • Measurement of electrical resistance profiles over various thicknesses
    • Near-surface (a few microns) to full wafer cross-section (defined by grinding angle)
    • Extremely thin layers (ultra-shallow) on special request
  • Necessary pre-preparations (grinding, wet chemical removal of cover layers, cutting/breaking samples)


  • Electrically-active doping profiles of substrates or active and passive elements
  • Comparison with chemical/physical SIMS profiles

Sample Requirements

  • Silicon, no measurement of compound semiconductors
  • Measurement on structures which requires minimum structure sizes: approx. 100 µm x 400 µm (depending on probe spacing and analysis depth)
  • Sample is destroyed by grinding


Königsbrücker Landstr. 161
01109 Dresden

t +49 351 8841-200
This email address is being protected from spambots. You need JavaScript enabled to view it.

We Use Cookies

In order to optimize our website and for continuous improvement in addition to technically necessary cookies we also use cookies for statistical / analysis purposes. Please find more information in our Privacy Policy.

Cookie Settings