The Spreading Resistance Profiling method is suitable for measuring electrical resistance profiles in silicon. These measurements can be used to calculate doping profiles of the electrically-active charge carriers. In comparison, physical/chemical doping can be measured using SIMS.
For SRP, the silicon sample is polished with a specific angle toward the surface and a defined profile is generated over the depth via the grinding angle. This polished section is then electrically characterized using a step prober which generates the depth profile.
We perform SRP grindings and measurements of different depths on any type of silicon sample. We are currently working on a project to characterize SiC, but the measurement of compound semiconductors is currently not possible.
SGS INSTITUT FRESENIUS GmbH
Königsbrücker Landstr. 161
t +49 351 8841-200