Secondary Ion Mass Spectrometry (SIMS)

Dynamic secondary ion mass spectrometry (SIMS, dSIMS) is a method of physical analysis for surface layers in the depth range of a few nm up to several dozen microns. The sample to be analyzed is sputtered locally with a focused beam of primary ions and the secondary ions knocked out of the material are analyzed. This is done with the help of a mass spectrometer, in our case by means of magnetic sector or Flight time analyzer. Depending on the secondary ion or element, the detection limit can extend to the sub-ppm range. We perform our dynamic SIMS measurements on CAMECA IMS 6f and 7f instruments..

Our Services

• Depth profiling of dopants and impurities
• Composition and contamination measurements of layers and bulk materials (metals, dielectrics, IV-IV, III-V and II-VI materials, such as SiC, GaAs, GaN, SiGe, ZnSe)
• Ultra-high-resolution depth profiling of shallow implants and ultra-thin layers (ULE implants and gate oxides)
• Small area analyses from 5 microns, measurement on structured samples
• Isotope analysis
• Analysis of all elements including hydrogen
• High-precision process adaptation of ion implants and diffusion processes
• Process controls
• Necessary sample preparations (grinding, wet chemical removal of cover layers, cutting/breaking samples, removal of elements / bond wires)

Applications

• Dopant profiles of B, P, As in Si, as well as measurement of the electrically active species by means of SRP
• Dopant profiles of Al, N in SiC
• Depth profile analysis using electrically-active hot spots, examination of failure parts
• Process control of ion implants, furnace processes, etc.
• Contaminations in ZnSe sputter substrates
• Depth profiling of matrix stoichiometry in combination with XPS

Sample Requirements

• Solid, vacuum-stable samples
• Ideally, sample pieces of approx. 8 mm x 8 mm in size
  (we can cut larger samples to the required size)
• Top layers (metals/passivations may need to be removed)
• Sample/measuring area is destroyed during the measurement
• Depending on the desired elements, multiple measurement may be necessary

Specifications

• Measurement signal: secondary ion intensity (quantification standards for many elements present in various matrices)
• Elements: H to U, including their isotopes
• Post-white limits: >1E10 At/cm³ – 1E16 At/cm³
• Depth resolution: >5 Å

Contact

SGS INSTITUT FRESENIUS GmbH
Königsbrücker Landstr. 161
01109 Dresden

t +49 351 8841-200
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