Secondary Ion Mass Spectrometry (SIMS)

Dynamic secondary ion mass spectrometry (SIMS, dSIMS) is a method of physical analysis for surface layers in the depth range of a few nm up to several dozen microns. The sample to be analyzed is sputtered locally with a focused beam of primary ions and the secondary ions knocked out of the material are analyzed. This is done with the help of a mass spectrometer, in our case by means of magnetic sector or Flight time analyzer. Depending on the secondary ion or element, the detection limit can extend to the sub-ppm range. We perform our dynamic SIMS measurements on CAMECA IMS 6f and 7f instruments..

Our Services

  • Depth profiling of dopants and impurities
  • Composition and contamination measurements of layers and bulk materials (metals, dielectrics, IV-IV, III-V and II-VI materials, such as SiC, GaAs, GaN, SiGe, ZnSe)
  • Ultra-high-resolution depth profiling of shallow implants and ultra-thin layers (ULE implants and gate oxides)
  • Small area analyses from 5 microns, measurement on structured samples
  • Isotope analysis
  • Analysis of all elements including hydrogen
  • High-precision process adaptation of ion implants and diffusion processes
  • Process controls
  • Necessary sample preparations (grinding, wet chemical removal of cover layers, cutting/breaking samples, removal of elements / bond wires)

Applications

  • Dopant profiles of B, P, As in Si, as well as measurement of the electrically active species by means of SRP
  • Dopant profiles of Al, N in SiC
  • Depth profile analysis using electrically-active hot spots, examination of failure parts
  • Process control of ion implants, furnace processes, etc.
  • Contaminations in ZnSe sputter substrates
  • Depth profiling of matrix stoichiometry in combination with XPS

Sample Requirements

  • Solid, vacuum-stable samples
  • Ideally, sample pieces of approx. 8 mm x 8 mm in size
    (we can cut larger samples to the required size)
  • Top layers (metals/passivations may need to be removed)
  • Sample/measuring area is destroyed during the measurement
  • Depending on the desired elements, multiple measurement may be necessary

Specifications

  • Measurement signal: secondary ion intensity (quantification standards for many elements present in various matrices)
  • Elements: H to U, including their isotopes
  • Post-white limits: >1E10 At/cm³ – 1E16 At/cm³
  • Depth resolution: >5 Å

Contact

SGS INSTITUT FRESENIUS GmbH
Königsbrücker Landstr. 161
01109 Dresden

t +49 351 8841-200
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