The additional interconnectivity needed among the increasing number of transistors in modern ULSI devices, drives additional levels of interconnect.
Multi levels metallization systems produced using combinations sputtering and chemical vapor deposition (CVD) have been becoming more and more usually during the last years.
The number of materials for metallization is not just increasing for CMOS applications, but also for products in sensor and microsystem technology.
High performance analytics assist you in the areas of device and process development as well as in failure analysis.
Technological relevant evaluation of the results
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