The additional interconnectivity needed among the increasing number of transistors in modern ULSI devices, drives additional levels of interconnect.
Multi levels metallization systems produced using combinations sputtering and chemical vapor deposition (CVD) have been becoming more and more usually during the last years.

The number of materials for metallization is not just increasing for CMOS applications, but also for products in sensor and microsystem technology.

High performance analytics assist you in the areas of device and process development as well as in failure analysis.

Our range of services:

Determination of

  • layer thickness,
  • layer composition,
  • element depth profiles,
  • surface qualities,
  • grain size

Detection of

  • contaminants,
  • surface contamination,
  • defects

Investigation of

  • silicide formation,
  • barrier effects,
  • diffusion, migration and
  • corrosion phenomena,
  • reliability problems

Technological relevant evaluation of the results


Königsbrücker Landstr. 161
D-01109 Dresden
t: +49 351 8841 - 0
f: +49 351 8841 – 190


We Use Cookies

In order to optimize our website and for continuous improvement in addition to technically necessary cookies we also use cookies for statistical / analysis purposes. Please find more information in our Privacy Policy.

Cookie Settings