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The additional interconnectivity needed among the increasing number of transistors in modern ULSI devices, drives additional levels of interconnect.
Multi levels metallization systems produced using combinations sputtering and chemical vapor deposition (CVD) have been becoming more and more usually during the last years. |
The number of materials for metallization is not just increasing for CMOS applications, but also for products in sensor and microsystem technology.
High performance analytics assist you in the areas of device and process development as well as in failure analysis.
Our range of services:
Determination of
- layer thickness,
- layer composition,
- element depth profiles,
- surface qualities,
- grain size
Detection of
- contaminants,
- surface contamination,
- defects
Investigation of
- silicide formation,
- barrier effects,
- diffusion, migration and
- corrosion phenomena,
- reliability problems
Technological relevant evaluation
of the results
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SGS INSTITUT FRESENIUS GmbH
Zur Wetterwarte 10, Haus 107
D-01109 Dresden
t +49 351 8841-100
f +49 351 8841-190
microelectronics institut-fresenius.de
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