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Doping is an important process in semiconductor technology. Exact depth profiling of the doped elements and measurement of the electrically active dopant profiles are necessary for device and process development, process control, testing of simulation results and failure analysis. |
SGS INSTITUT FRESENIUS provides two methods for this purpose that have been proving their reliability for many decades.
Secondary ion mass spectrometry, which is used to measure element depth profiles as well as the SRP technique which is predestinated for the measurement of electrically active carrier distribution are both extremely sensitive and provide a high dynamic range. The two methods comple-ment one another perfectly.
Our range of services:
Depth profiling of dopants and contaminants using:
- Secondary ion mass spectrometry (SIMS, TOF-SIMS)
Measurement of electrically active dopant profiles using Spreading Resistance Profiling (SRP)
- Determination of dopant profiles
- resistivity, carrier concentration, profile shape, p-n junction depths, low-high juctions
- Technology-relevant evaluation of the results
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SGS INSTITUT FRESENIUS GmbH
Zur Wetterwarte 10, Haus 107
D-01109 Dresden
t +49 351 8841-100
f +49 351 8841-190
microelectronics institut-fresenius.de
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